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Degradation of organic field-effect transistors made of pentacene

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Abstract

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.

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Authors and Affiliations

  1. Department of Electrical Engineering EIM-E, University of Paderborn, Warburger Str. 100, D-33098, Paderborn, Germany

    Ch. Pannemann, T. Diekmann & U. Hilleringmann

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  1. Ch. Pannemann
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  2. T. Diekmann
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  3. U. Hilleringmann
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Correspondence to Ch. Pannemann.

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Pannemann, C., Diekmann, T. & Hilleringmann, U. Degradation of organic field-effect transistors made of pentacene. Journal of Materials Research 19, 1999–2002 (2004). https://doi.org/10.1557/JMR.2004.0267

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  • DOI: https://doi.org/10.1557/JMR.2004.0267

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