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Analytical modeling of reservoir effect on electromigration in Cu interconnects

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Abstract

Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model.

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References

  1. C.K. Hu, R. Rosenberg, and K.L. Lee: Electromigration path in Cu thin-film lines. Appl. Phys. Lett. 74, 2945 (1999).

    Article  CAS  Google Scholar 

  2. J.R. Lloyd and J.J. Clement: Electromigration in copper conductors. Thin Solid Films 262, 135 (1995).

    Article  CAS  Google Scholar 

  3. A.V. Vairagar, S.G. Mhaisalkar, A. Krishnamoorthy, K.N. Tu, A.M. Gusak, M.A. Meyer, and E. Zschech: In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures. Appl. Phys. Lett. 85, 2502 (2004).

    Article  CAS  Google Scholar 

  4. A.V. Vairagar, S.G. Mhaisalkar, A. Krishnamoorthy, M.A. Meyer, E. Zschech, K.N. Tu, and A.M. Gusak: Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures. Appl. Phys. Lett. 87, 081909 (2005).

    Article  Google Scholar 

  5. T.V. Zaporozhets, A.M. Gusak, K.N. Tu, and S.G. Mhaisalkar: Three-dimensional simulation of void migration at the interface between thin metallic film and dielectric under electromigration. J. Appl. Phys. 98, 103508 (2005).

    Article  Google Scholar 

  6. C.K. Hu, L. Gignac, R. Rosenberg, E. Liniger, J. Rubino, C. Sambucetti, A. Domenicucci, X. Chen, and A.K. Stamper: Reduced electromigration of Cu wires by surface coating. Appl. Phys. Lett. 81, 1782 (2002).

    Article  CAS  Google Scholar 

  7. C.K. Hu, L. Gignac, E. Liniger, B. Herbst, D.L. Rath, S.T. Chen, S. Kaldor, A. Simon, and W.T. Tseng: Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps. Appl. Phys. Lett. 83, 869 (2003).

    Article  CAS  Google Scholar 

  8. Y. Shacham-Diamand and S. Lopatin: High aspect ratio quarter-micron electroless copper integrated technology. Microelectron. Eng. 37–8, 77 (1997).

    Article  Google Scholar 

  9. A. von Glasow, A.H. Fischer, D. Bunel, G. Friese, A. Hausmann, O. Heitzsch, M. Hommel, J. Kriz, S. Penka, P. Raffin, C. Robin, H.P. Sperlich, F. Ungar, and A.E. Zitzelsberger: The influence of the SiN cap process on the electromigration and stressvoiding performance of dual damascene Cu interconnects. Proc 41st Annual Int. Rel. Phys. Symp., IEEE, Piscataway, NJ, 2003, p. 146.

    Google Scholar 

  10. M.Y. Yan, J.O. Suh, F. Ren, K.N. Tu, A.V. Vairagar, S.G. Mhaisalkar, and A. Krishnamoorthy: Effect of Cu3Sn coatings on electromigration lifetime improvement of Cu dual-damascene interconnects. Appl. Phys. Lett. 87, 211103 (2005).

    Article  Google Scholar 

  11. M.Y. Yan, K.N. Tu, A.V. Vairagar, S.G. Mhaisalkar, and A. Krishnamoorthy: Confinement of electromigration induced void propagation in Cu interconnect by a buried Ta diffusion barrier layer. Appl. Phys. Lett. 87, 261906 (2005).

    Article  Google Scholar 

  12. K.N. Tu, C.C. Yeh, C.Y. Liu, and C. Chen: Effect of current crowding on vacancy diffusion and void formation in electromigration. Appl. Phys. Lett. 76, 988 (2000).

    Article  CAS  Google Scholar 

  13. Y.B. Park and I.S. Jeon: Effects of mechanical stress at no current stressed area on electromigration reliability of multilevel interconnects. Microelectron. Eng. 71, 76 (2004).

    Article  CAS  Google Scholar 

  14. I.S. Jeon and Y.B. Park: Analysis of the reservoir effect on electromigration reliability. Microelectron. Reliab. 44, 917 (2004).

    Article  CAS  Google Scholar 

  15. W. Shao, A.V. Vairagar, C.H. Tung, Z.L. Xie, A. Krishnamoorthy, and S.G. Mhaisalkar: Electromigration in copper damascene interconnects: Reservoir effects and failure analysis. Surf. Coat. Technol. 198, 257 (2005).

    Article  CAS  Google Scholar 

  16. Y.J. Park and C.V. Thompson: The effects of the stress dependence of atomic diffusivity on stress evolution due to electromigration. J. Appl. Phys. 82, 4277 (1997).

    Article  CAS  Google Scholar 

  17. T. Matsumoto, H. Fujii, T. Ueda, M. Kamai, and K. Nogi: Measurement of surface tension of molten copper using the free-fall oscillating drop method. Meas. Sci. Technol. 16, 432 (2005).

    Article  CAS  Google Scholar 

  18. R.E. Loehman, A.P. Tomsia, J.A. Pask, and S.M. Johnson: Bonding mechanisms in silicon-nitride brazing. J. Am. Ceram. Soc. 73, 552 (1990).

    Article  CAS  Google Scholar 

  19. C.L. Gan, C.V. Thompson, K.L. Pey, and W.K. Choi: Experimental characterization and modeling of the reliability of three-terminal dual-damascene Cu interconnect trees. J. Appl. Phys. 94, 1222 (2003).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798

    Zhenghao Gan

  2. Department of Theoretical Physics, Cherkasy National University, Cherkasy, 18017, Ukraine

    A. M. Gusak

  3. School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798

    W. Shao, Zhong Chen & S. G. Mhaisalkar

  4. Department of Theoretical Physics, Cherkasy National University, Cherkasy, 18017, Ukraine

    T. Zaporozhets

  5. Department of Materials Science and Engineering, University of California–Los Angeles, Los Angeles, California, 90095-1595, USA

    K. N. Tu

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  1. Zhenghao Gan
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  2. A. M. Gusak
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  3. W. Shao
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  4. Zhong Chen
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  5. S. G. Mhaisalkar
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  6. T. Zaporozhets
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  7. K. N. Tu
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Correspondence to Zhenghao Gan.

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Gan, Z., Gusak, A.M., Shao, W. et al. Analytical modeling of reservoir effect on electromigration in Cu interconnects. Journal of Materials Research 22, 152–156 (2007). https://doi.org/10.1557/jmr.2007.0001

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  • DOI: https://doi.org/10.1557/jmr.2007.0001

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