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Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film

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Abstract

Electrodeposited Ag film was explored as a potential interfacial barrier to Bi segregation for suppressing the interfacial embrittlement of Cu/SnBi interconnects. The presence of Ag film introduced Ag3Sn intermetallic layer at the interface, which effectively prevented Bi from reaching the Cu/intermetallic interface. When the persistent slip bands (PSBs) in the Cu single crystal were driven to impinge the Cu/Cu3Sn interface, interfacial cracking was averted and instead superceded by cracking of intermetallic compounds (IMCs) at the interface.

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Acknowledgments

This work was financially supported by National Basic Research Program of China (Grant No. 2004CB619306) and the National Outstanding Young Scientist Foundation (Grant No. 50625103 to Z.F. Zhang).

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Authors and Affiliations

  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China

    Q.S. Zhu, Z.F. Zhang & Z.G. Wang

  2. Department of Materials Science and Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois, 61801, USA

    J.K. Shang

Authors
  1. Q.S. Zhu
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  2. Z.F. Zhang
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  3. Z.G. Wang
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  4. J.K. Shang
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Correspondence to Z.F. Zhang or J.K. Shang.

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Zhu, Q., Zhang, Z., Wang, Z. et al. Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film. Journal of Materials Research 23, 78–82 (2008). https://doi.org/10.1557/JMR.2008.0015

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  • DOI: https://doi.org/10.1557/JMR.2008.0015

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