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Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications

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Abstract

Applying sufficient tensile strain to Ge leads to a direct bandgap group IV semiconductor, which emits in the mid-infrared (MIR) wavelength range. However, highly strained-Ge cannot be directly grown on Si because of its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms were then partially etched to keep locally strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated in Ge, which was bonded on Si. Our approach allows envisioning integrated strained-Ge on Si platform for MIR-integrated optics. Silicon photonics merge optical and electronic components that can be integrated together onto a single microchip.

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Acknowledgments

The authors would like to thank the Plateforme de Technologie Amont and 41 in Grenoble for the clean room facilities and Dhruv Singhal for his language expertise. This work was supported by the CEA Phare project photonics.

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Authors and Affiliations

  1. Univ. Grenoble Alpes, CEA, INAC, PHELIQS, F-38000, Grenoble, France

    A. Gassenq, K. Guilloy, N. Pauc & V. Calvo

  2. CEA-LETI, Univ. Grenoble Alpes, 38000, Grenoble, France

    D. Rouchon, J. Widiez, J. Rothman, J.-M. Hartmann, A. Chelnokov & V. Reboud

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  1. A. Gassenq
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Correspondence to A. Gassenq.

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Gassenq, A., Guilloy, K., Pauc, N. et al. Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications. MRS Communications 7, 691–694 (2017). https://doi.org/10.1557/mrc.2017.53

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