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Material Prospects of Reconfigurable Transistor (RFETs)–From Silicon to Germanium Nanowires

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Abstract

Reconfigurable nanowire transistors provide the operation of unipolar p-type and n-type FETs freely selectable within a single device. The enhanced functionality is enabled by controlling the currents through two individually gated Schottky junctions. Here we analyze the impact of the Schottky barrier height on the symmetry of Silicon nanowire RFET transfer characteristics and their performance within circuits. Prospective simulations are carried out, indicating that germanium nanowire based RFETs of the same dimensions will show a distinctly increased performance, making them a promising material solution for future reconfigurable electronics.

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Acknowledgments

This work was partly funded by “Deutsche Forschungsgemeinschaft (DFG)” in the framework of the project ReproNano (MI 1247/6-1) and within the Cluster of Excellence ‘CfAED’.

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Authors and Affiliations

  1. Namlab gGmbH, Nöthnitzer Strasse 64, 01187, Dresden, Germany

    Jens Trommer, Anett Heinrich, Paul Jordan, Matthias Grube, Stefan Slesazeck, Thomas Mikolajick & Walter M. Weber

  2. Center for Advancing Electronics Dresden (‘CfAED’), TU Dresden, 01062, Dresden, Germany

    Jens Trommer, André Heinzig, Thomas Mikolajick & Walter M. Weber

  3. Institute of Semiconductors and Microsystems, TU Dresden, Nöthnitzer Strasse 64, 01187, Dresden, Germany

    André Heinzig & Thomas Mikolajick

Authors
  1. Jens Trommer
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  2. André Heinzig
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  3. Anett Heinrich
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  4. Paul Jordan
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  5. Matthias Grube
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  6. Stefan Slesazeck
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  7. Thomas Mikolajick
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  8. Walter M. Weber
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Trommer, J., Heinzig, A., Heinrich, A. et al. Material Prospects of Reconfigurable Transistor (RFETs)–From Silicon to Germanium Nanowires. MRS Online Proceedings Library 1659, 225–230 (2014). https://doi.org/10.1557/opl.2014.110

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