Abstract
Thin film transistors were fabricated using amorphous IZO (In2O3-10wt%ZnO) with low carrier concentration (~3x1017/cm3) for the channel material and a-IZO with high carrier concentration (~2×1020/cm3) for source-drain metallization. The performance of a-IZO channel materials processed entirely at room temperature was established using a simple gate-down thin film transistor device. The TFT test structures were fabricated on p-type Si substrates with a thermally grown SiO2 gate oxide. The channel and metallization layers were sputter deposited from a commercially available IZO target at room temperature in a gas atmosphere containing 10 vol.% and 0 vol.% oxygen, respectively. The TFT devices are depletion mode n-channel devices with a high saturation mobility (~20cm2/Vs) and high on/off ratio (~108) and, as such, appear to be well suited for active matrix TFT applications.
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Yaglioglu, B., Yeom, HY., Beresford, R. et al. The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3:10wt%ZnO) based Thin Film Transistors. MRS Online Proceedings Library 905, 306 (2005). https://doi.org/10.1557/PROC-0905-DD03-06
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DOI: https://doi.org/10.1557/PROC-0905-DD03-06