Abstract
We investigated an AlGaN/GaN heterostructure field effect transistor (HFET) on Si substrates using a multi-wafer metalorganic vapor phase epitaxy (MOVPE) system. It was confirmed that a GaN film with smooth surface and without any crack was obtained. To increase a resistance of a GaN buffer layer, the carbon (C) -doping was carried out by controlling the V/III ratio and the growth pressure. The breakdown voltage of the buffer layer was dramatically improved by introducing the C. As a result, the breakdown voltage was about 900 V when the C concentration was about ∼8×1018 cm−3. After while, an AlGaN/GaN heterojunction FET (HFET) on a C-doped GaN buffer layer was fabricated. We achieved the breakdown voltage of over 1000 V and the maximum drain current of over 150 mA/mm, respectively. It was found that the C doped buffer layer is very effective for improving the breakdown voltage of AlGaN/GaN HFETs.
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Niiyama, Y., Kato, S., Sato, Y. et al. Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE. MRS Online Proceedings Library 955, 1606 (2006). https://doi.org/10.1557/PROC-0955-I16-06
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DOI: https://doi.org/10.1557/PROC-0955-I16-06