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Germanium Layer Exfoliation by Ion-Cut Processes

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Abstract

(100)-oriented Czochralski germanium (Cz Ge) wafers were implanted with hydrogen at energies up to 100 keV (related to H ) at a doses of D = 4•1016 H+/cm2. Post-hydrogen annealing in normal air atmosphere on a hotplate was employed for 10 min at various temperatures between 350 °C and 600 °C to investigate the samples with regard to blistering and layer exfoliation having in mind the Smart-CutTM technology for GOI structure formation. The generation and evolution of blisters and craters (“exploded” blisters demonstrating layer exfoliation) were investigated in dependence on the annealing temperature by atomic force microscopy and µ-Raman spectros-copy. The latter method points out the appearance of strong tensile stress upon H+ implantation and subsequent annealing. If the tensile stress exceeds about 1.2 GPa layer exfoliation occurs.

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Authors and Affiliations

  1. Department of Mathematics and Computerscience, University of Hagen, Universitätsstr. 27, D-58084, Hagen, Germany

    Reinhart Job & Wolfgang Düngen

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  1. Reinhart Job
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  2. Wolfgang Düngen
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Job, R., Düngen, W. Germanium Layer Exfoliation by Ion-Cut Processes. MRS Online Proceedings Library 994, 09940905 (2006). https://doi.org/10.1557/PROC-0994-F09-05

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  • DOI: https://doi.org/10.1557/PROC-0994-F09-05

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