Abstract
The intensity profiles of various kinds of topheaters are compared and discussed. Using the mercury-arc lamp heater experiments on polycrystalline silicon layers of thicknesses varying from 1 to 10 urn were performed. The 10 fiva layers were polished prior to recrystallization. After zone melting recrystallization they showed a strong (100) texture combined with an alignment of the [010] direction with the scan direction. By patterning 1 ¼m poly-silicon films into isolated narrow silicon stripes, the kinetic mechanism that is shown to be responsible for the alignment of the [010] direction along the scan direction could be inhibited. In this way other mechanisms that influence the orientation could be studied. Finally some electrical characteristics are presented.
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Mertens, P.W., Wouters, D.J., Yallup, K.J. et al. Evaluation of Lamp Zone-Melting Recrystallization. MRS Online Proceedings Library 107, 221–224 (1987). https://doi.org/10.1557/PROC-107-221
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DOI: https://doi.org/10.1557/PROC-107-221