Abstract
Boron doping of single crystal silicon using an argon fluoride excimer laser with diborane gas has been performed. Diborane gas has an absorption at 193nm, which leads to gas phase photodecomposition of the diborane. Utilizing the photolyic effect, we obtained high surface concentration and ultrashallow junctions of 5×1020 cm−3 and 0.1 µm, respectively. The photolytic effect enhances the incorporation of the dopant species.
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Yoshioka, S., Wada, J., Saeki, H. et al. Heavily Doped Ultra-Shallow Junctions Formed by an ArF Excimer Laser. MRS Online Proceedings Library 129, 597–601 (1988). https://doi.org/10.1557/PROC-129-597
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DOI: https://doi.org/10.1557/PROC-129-597