Abstract
The effect of hydrogen on stress in thin film structures has been investigated for Ti, Al, Ti(Al) and Al(Ti) films. The stress in the metal films was measured in-situ as a function of temperature and ambient (vacuum of 10-6Torr., forming gas and nitrogen) using a bending beam technique. The metal films were deposited on fused quartz or polyimide/fused quartz substrates using a dual e-gun evaporation method. The stress in pure Ti films was found to be strongly dependent on the annealing environment. Upon thermal cycling in a forming gas, an abrupt change of stress in the Ti film due to crack formation and delamination in the Ti film was observed. The possibility to eliminate the hydrogen effect by Al addition has been investigated. The hydrogen effect can be reduced by an addition of 5 at.% Al, but stress induced crack formation similar to the pure Ti film was still observed in this alloy film. An increase to 20 at.% Al in the alloy films eliminated the hydrogen effect, however, such an alloy film was brittle as cracks and delamination were observed after one thermal cycle from room temperature to 350 °C. A similar behavior in stress relaxation was observed in an Al-riched film with 20 at.% Ti.
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Hu, C.K., Ho, P.S. & Gupta, D. Effect of Hydrogen on Thermal Stress in Layered Structure of Ti and Ti(Al) Thin Films.. MRS Online Proceedings Library 130, 255–260 (1988). https://doi.org/10.1557/PROC-130-255
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DOI: https://doi.org/10.1557/PROC-130-255