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The Initial Stages of MBE Growth of InSb on GaAs(100) - A High Misfit Heterointerface

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The initial stages of heteroepitaxy of InSb on GaAs(100) grown by MBE have been studied by transmission electron microscopy. Three dimensional InSb island growth occurs in which the majority of the 14.6% misfit strain is accommodated by a square array of a/2<011= edge-type misfit dislocations. The implications of each island having a well defined defect array before coalescence into a continuous epilayer are discussed. Some 600-type a/2<101= interfacial defects and associated threading dislocations are also observed in coalesced films and possible reasons for their existence are explained. A strong asymmetrical distribution of planar defects in the InSb islands is observed and the origin of the asymmetry is discussed. Finally some evidence for local intermixing in the vicinity of the interface is presented.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Liverpool, England

    C. J. Kiely

  2. Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL, 61801, USA

    A. Rockett, J. I. Chyi & H. Morkoc

Authors
  1. C. J. Kiely
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  2. A. Rockett
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  3. J. I. Chyi
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  4. H. Morkoc
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Kiely, C.J., Rockett, A., Chyi, J.I. et al. The Initial Stages of MBE Growth of InSb on GaAs(100) - A High Misfit Heterointerface. MRS Online Proceedings Library 159, 63–68 (1989). https://doi.org/10.1557/PROC-159-63

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  • DOI: https://doi.org/10.1557/PROC-159-63

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