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The Effect of Hydrogen on the Structure and Electrical and Optical Properties of Silicon-Germanium Alloys

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Abstract

The transport properties of intrinsic micro-crystalline and amorphous SiGe films are investigated. In the amorphous system it is found that the electron lifetime is relatively independent of band gag while the electron mobility of a-Ge:H is a factor of ten less than that of a-Si:H. Micro-crystalline silicon films have greater excess photo-conductivity as compared to a-Si:H predominantly due to longer effective lifetimes. Films containing micro-crystalline silicon in a matrix of a-SiGe:H have been prepared and are found to have comparatively poor transport.

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Authors and Affiliations

  1. University of Delaware, Institute of Energy Conversion Newark, Delaware, 19716, USA

    C. M. Fortmann & D. E. Albright

  2. Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

    I. H. Campbell & P. M. Fauchet

Authors
  1. C. M. Fortmann
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  2. D. E. Albright
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  3. I. H. Campbell
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  4. P. M. Fauchet
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Fortmann, C.M., Albright, D.E., Campbell, I.H. et al. The Effect of Hydrogen on the Structure and Electrical and Optical Properties of Silicon-Germanium Alloys. MRS Online Proceedings Library 164, 315–320 (1989). https://doi.org/10.1557/PROC-164-315

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  • DOI: https://doi.org/10.1557/PROC-164-315

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