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In Situ Growth of Epitaxial Superconducting Yba2Cu3O7-X Films on Insulating, Semiconducting and Ferroelectric K(Ta,Nb)O3 by Pulsed Laser Ablation

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Abstract

K(Ta,Nb)O3 (KTN) is an interesting substrate for use in studies of epitaxial superconducting film-substrate interactions because of a moderate lattice parameter mismatch with YBa2Cu3O7-x and great versatility in electrical properties. KTN’s properties are easily modified by doping to form an n-type semiconductor and/or a ferroelectric with variable ferroelectric Tp. As an initial step in exploring such studies we have carried out what are believed to be the first epitaxial growth experiments of YBa2Cu3O7-x films on insulating, semiconducting and ferroelectric KTN single crystals by pulsed laser ablation. We find that c-axis-normal epitaxial films can be consistently grown with TSc(R = 0) > 90K , △TSC ~1.5K, and Jc > IMA/cm2 on semiconducting and/or insulating KTaO3. However, growth on KNDO3 is problematic because of stresses generated by cooling the substrate through first order structural transitions, at even moderate cooling rates.

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McCAMY, J.W., Norton, D.P., Lowndes, D.H. et al. In Situ Growth of Epitaxial Superconducting Yba2Cu3O7-X Films on Insulating, Semiconducting and Ferroelectric K(Ta,Nb)O3 by Pulsed Laser Ablation. MRS Online Proceedings Library 169, 469–472 (1989). https://doi.org/10.1557/PROC-169-469

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  • DOI: https://doi.org/10.1557/PROC-169-469

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