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UV Laser-Initiated Formation of Si3N4

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Abstract

Si3N4 films have been deposited on Si by using 193 nm ArF excimer laser radiation to initiate the reaction of SiH4 and NH3 at substrate temperatures between 200–600°C. Stoichiometric films having physical and optical properties comparable to those produced using low-pressure chemical vapor deposition (LPCVD) have been produced. The dielectric properties of the films are at present inferior to those of LPCVD material.

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Authors and Affiliations

  1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts, 02173, USA

    T. F. Deutsch, D. J. Silversmith & R. W. Mountain

Authors
  1. T. F. Deutsch
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  2. D. J. Silversmith
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  3. R. W. Mountain
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Additional information

This work was sponsored by the Department of the Air Force, in part under a specific program sponsored by the Air Force Office of Scientific Research, by the Defense Advanced Research Projects Agency, and by the Army Research Office.

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Deutsch, T.F., Silversmith, D.J. & Mountain, R.W. UV Laser-Initiated Formation of Si3N4. MRS Online Proceedings Library 17, 129–134 (1982). https://doi.org/10.1557/PROC-17-129

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  • DOI: https://doi.org/10.1557/PROC-17-129

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