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Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam

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Abstract

A new technique using a focused ion beam has been developed for the fabrication of transmission electron microscopy specimens in pre-selected regions. The method has been proven in the fabrication of both cross-sectional and planar specimens, with no induced artefacts. The lateral accuracy achievable in the selection of an area for cross-sectional analysis is better than one micrometre. The technique has been applied to a number of silicon and III-V based integrated circuits, and is expected to be suitable for many other materials and structures.

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Acknowledgement

Support from the Science and Engineering Research Council (U.K.) is acknowledged. We are grateful to Dr. W.M. Stobbs and Dr. R.F. Broom for providing transmission electron micrographs, and to IBM (Zürich) for providing the GaAs laser structure.

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Author notes

  1. E. C. G. Kirk

    Present address: Department of Materials Science, Cambridge University, Pembroke Street, Cambridge, CB2 3QZ, UK

  2. D. A. Williams

    Present address: Hitachi Cambridge Laboratory, Madingley Road, Cambridge, CB3 OHE, UK

Authors and Affiliations

  1. Microelectronics Research Centre, Cavendish Laboratory, Madingley Road, Cambridge, CB3 OHE, UK

    R. J. Young, E. C. G. Kirk, D. A. Williams & H. Ahmed

Authors
  1. R. J. Young
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  2. E. C. G. Kirk
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  3. D. A. Williams
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  4. H. Ahmed
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Young, R.J., Kirk, E.C.G., Williams, D.A. et al. Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam. MRS Online Proceedings Library 199, 205–216 (1990). https://doi.org/10.1557/PROC-199-205

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  • DOI: https://doi.org/10.1557/PROC-199-205

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