Abstract
This paper investigates the issues in the scaling of thin film PZT (Lead-Zirconate- Titanate) capacitors for DRAM (Dynamic Random Access Memories) applications. The test structures used were MIM (metal-insulator-metal) capacitors with platinum electrodes and PZT deposited using a sol-gel process. Charge storage density (Q’c), leakage current density (JL), unipolar switching time to 10% decay (ts), time dependent dielectric breakdown (TDDB) and electrical fatigue have been analyzed. Unipolar switching time has been modeled as an RC time constant, where C is electric-field dependent. Q’c at a given electric field appears to remain constant over the range of film thicknesses and electrode areas studied. Leakage current density and time-to-breakdown (tBD) for a given electric field degrade with decreasing film thickness. Unipolar stressing causes considerably less fatigue than bipolar stressing, and after 2 X 1011 cycles, a 400nm film still exhibits sufficient Q’c for DRAM operation.
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Sudhama, C., Carrano, J.C., Parker, L.H. et al. Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Trtanate (PZT) Ferroelectric Thin Film Capacitors. MRS Online Proceedings Library 200, 331–336 (1990). https://doi.org/10.1557/PROC-200-331
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DOI: https://doi.org/10.1557/PROC-200-331