Abstract
The electromigration drift velocity of Al in Al(3wt.% Si), Al(2wt.%Cu), and Al(2wt.%Cu,3wt.%Si) was measured in a temperature range 133 to 220 °C with current densities of 1.0 to 1.5×106A/cm2. In Al(3wt.% Si), a significant Al depletion at the cathode end and accumulation at the anode end of stripe were observed within a few hours at 1.5×106A/cm2 and 200°C. In addition, local hillocks and voids along the metal lines were observed. For Al(Cu,Si), the Al drift velocity was slowed down by Cu addition. The majority of hillocks started to grow at a distance about 6 μm away from the cathode end with current density of 1.5×106 A/cm2. The drift velocity of Al in Al(Cu,Si) was found to be a function of time starting with an initial low value and increasing to a an final steady-state value. The behavior was attributed to the migration of Cu and dissolution of Al2Cu precipitates. The activation energies of the depletion 3 Aμm of Al(2%,Cu, 3%Si) was determined to be 0.90±02 eV. The dissolution and growth of A12Cu in the tested samples of Ti/Al(2%Cu)/Ti/TiN were observed using the scanning electron microscope and an electron microprobe.
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Acknowledgements
We are grateful to R. Rosenberg for helpful discussions, and N. Mazzeo, K. Knaus, J. Kirleis, and L. Cribb for the technical assistance, and IBM Yorktown Si Facility for sample preparations.
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Hu, CK., Ho, P., Small, M. et al. Electromigration in Al/W and Al(Cu)/W Interconnect Structures. MRS Online Proceedings Library 225, 99–105 (1991). https://doi.org/10.1557/PROC-225-99
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DOI: https://doi.org/10.1557/PROC-225-99