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Raman Spectroscopy Study of Damage in n+ - GaAs Introduced by H2 and CH4/H2 RIE

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Abstract

Raman spectroscopy is used to study crystal damage and electrical damage in n+-GaAs produced by reactive ion etching (REE). H2 RIE is compared with CH4/H2 RIE and the effect of temperature annealing is studied. The results are compared with C-V analysis. It is found that structural damage introduced by RIE in the surface layers of the sample is larger for the H2 plasma than for the CH4/H2 plasma. Annealing results in a decrease of this structural damage. H2 RIE as well as CH4/H2 RIE cause an increase of the inactive surface region. This increase is found to be larger for the H2 RDE. C-V experiments show that annealing results in a reactivation and associated decrease of the width of the inactive region.

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Acknowledgement

The authors thank Dr. W. Vandervorst for helpful discussions and Stefan Faohnhoff for performing the Raman measurements. R. Pereira would like to thank CNPq and TELEBRAS-BRASIL for financial support.

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Authors and Affiliations

  1. Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, B-3001, Leuven, Belgium

    I. De Wolf, M. Van Hove, R. -G. Pereira, M. Van Rossum & H. E. Maes

  2. Forschungszentrum Jülich, Institut für Schicht- und Ionentechnik (ISI), P.O. Box 1913, D-5170, Jülich, Germany

    H. MÜnder

Authors
  1. I. De Wolf
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  2. M. Van Hove
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  3. R. -G. Pereira
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  4. M. Van Rossum
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  5. H. E. Maes
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  6. H. MÜnder
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De Wolf, I., Van Hove, M., Pereira, R.G. et al. Raman Spectroscopy Study of Damage in n+ - GaAs Introduced by H2 and CH4/H2 RIE. MRS Online Proceedings Library 240, 355–360 (1991). https://doi.org/10.1557/PROC-240-355

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  • DOI: https://doi.org/10.1557/PROC-240-355

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