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The Einstein Relation in Superlattices OP Wide-Band Gap Semiconductors Onder Cross-Field Configuration

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Abstract

in this paper we study the Einstein relation in superlattices of wide-band gap semiconductors under crossfield configuration and the forming materials incorporating spin and broadening of Landau levels, it is found, taking GaAs/ALAs superlattice as an example that the diffusivity-mobility ratio increases with increasing electron concentration and oscillates with inverse quantizing magnetic field due to SdH effect. Thetheoretical analysis is in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

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References

  1. B. Mitra, K.P. Ghatak, Phys. Letts, A. 142A, 401 (1989) and the references cited therein.

    Article  Google Scholar 

  2. S.N. Biswas, K.P. Ghatak, proc of SPIE, 792, 239(1987).

    Article  Google Scholar 

  3. K.P. Ghatak, N. Chattopadhyay, M. Mondai, J.Appl. phys. 63, 4536 (1988) and the references therein.

    Article  Google Scholar 

  4. K.P. Ghatak, M. Mondai, Z.F. Physik B, 69, 471 (1988) and the references therein.

    Article  Google Scholar 

  5. P.N. Butcher, A.N. Chakravarti, S. Swaminathan, phys. Stat. Sol. (a) 25, K47 (1974).

    Article  Google Scholar 

  6. B.R. Nag, Electron Transport in Compound Semiconductors, Springer Series in Solid State Sciences 11, 87 (1980).

    Google Scholar 

  7. N. Newberger, Electronic Materials, 2, New York, 1971.

  8. A. Aronov, J. Exp. Theo. phys. 103, 401 (1991).

    Google Scholar 

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Authors and Affiliations

  1. Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, University of Jadavpur, Calcutta, 700032, India

    Kamakhya P. Ghatak

  2. John Brown E and C inc., 333 Ludlow Street, P.O. 142 2, Connecticut, 06902, USA

    Badal De

Authors
  1. Kamakhya P. Ghatak
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  2. Badal De
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Ghatak, K.P., De, B. The Einstein Relation in Superlattices OP Wide-Band Gap Semiconductors Onder Cross-Field Configuration. MRS Online Proceedings Library 242, 377–380 (1992). https://doi.org/10.1557/PROC-242-377

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  • DOI: https://doi.org/10.1557/PROC-242-377

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