Abstract
This paper describes a detailed physical analysis of the electric fields, space charges, and polarization of thin-film ferroelectric devices. The analysis is based on a previously developed model of the electric field dependent polarization, permittivity, and hysteresis of the thin-film polycrystalline ferroelectric, which was derived from the Landau-Devonshire theory. This paper includes the macroscopic effects related to device structure and composition, including potential barriers at contacts, domain relaxation, grain boundary surface charge, and interactions between the space charges and the non-linear polar displacement.
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Brennan, C.J. Analysis of Electric Fields, Space Charges, and Polarization of Thin-Film Ferroelectric Capacitors Based on Landau Theory. MRS Online Proceedings Library 243, 141–146 (1991). https://doi.org/10.1557/PROC-243-141
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DOI: https://doi.org/10.1557/PROC-243-141