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Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films

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Abstract

The properties of ferroelectric thin films can be significantly influenced by the presence of point defects. The concentration of vacancies presented in these thin films is known to be one of the key parameters causing the degradation of these films when these films are subjected to polarization reversals. p]To study the effects of the vacancy concentration on the ferroelectric properties, sol gel PZT films and powders were annealed in different oxygen partial pressures. For the PZT films, the reduction of oxides to pure metals was not observed even with films annealed at 2×10−5 atmosphere of oxygen partial pressure. Samples annealed at low oxygen partial pressure (for instance, 10−3 and 2×10−5 atmosphere), which has more Pb and O2 depletions and consequently has more Pb and O2 vacancies, cannot be switched easily. The ratios of coercive field after and before fatigue increase as the defect concentrations of the annealed samples increase.

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References

  1. H. Duiker, P. Beale and J. Scott, Bull. Am. Phys. Soc., 33, 539 (1988)

    Google Scholar 

  2. W. Saleneck, Ferroelectrics, 4, 97 (1972)

    Article  Google Scholar 

  3. M. Takahashi, Jap. J. Appl. Phys., 9, 1236 (1970)

    Article  CAS  Google Scholar 

  4. D. Callaby, J.Appl. Phys., 36, 2751 (1965)

    Article  Google Scholar 

  5. K. Carl and K. Hardtl, Ferroelectrics, 17, 47 (1978)

    Google Scholar 

  6. P. Lambeck and G. Jonker, J. Phys. Chlem. Solids, 47, 453 (1986)

    Article  CAS  Google Scholar 

  7. I. Yoo and S. Desu, submitted to J. Mater. Eng. Sci.

  8. G. Yi, Z. Wu and M. Sayer, J. Appl. Phys., 64, 2717 (1988)

    Article  CAS  Google Scholar 

  9. R. Schwartz, Sandia National Laboratory, private communication.

  10. V. Prisedsky, V. Shishkovsky and V. Klimov, Ferroelectrics, 17, 465 (1978)

    Article  Google Scholar 

  11. S. Desu and C. Kwok, Mat. Res. Soc. Symp. Proc., 200, 267 (1990)

    Article  CAS  Google Scholar 

  12. V. Prisedsky, V. Komarov, G. Pan’ko and V. Klimov, Ferroeletrics, 23, 23 (1980)

    Article  Google Scholar 

  13. Handbook of X-ray Photoelectron Spectroscopy, C. Wagner, ed. (Perkin-Elmer Corp., Minnesota, 1980)

    Google Scholar 

  14. N. RajopadhyeS. Bhoraskar and S. Badrinarayan, Surface and Interface Analysis, 10, 392 (1987)

    Article  Google Scholar 

  15. Y. Tomashpol’skii, Sov. Phys. Solid State, 18, 1001 (1976)

    Google Scholar 

Download references

Acknowledgments

This study is partially supported by the Center for Advanced Ceramic Materials and DRAP A through ONR.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Virginia Polytechnic Institute & State University, Blacksburg, VA, 24061, USA

    Chi Kong Kwok & Seshu B. Desu

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  1. Chi Kong Kwok
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  2. Seshu B. Desu
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Kwok, C.K., Desu, S.B. Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films. MRS Online Proceedings Library 243, 393–398 (1991). https://doi.org/10.1557/PROC-243-393

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