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Barrier Inhomogeneities at Schottky Contacts: Curved Richardson Plots, Idealities, and Flat Band Barriers

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Abstract

Evaluating either curved Richardson plots or temperature-dependent ideality data allows for a quantitative characterization of spatial inhomogeneities at Schottky contacts. Applying the two independent methods to PtSi/Si diodes we obtain a standard deviation around 70mV for the barrier fluctuations. These results agree with those from the comparison of temperature-dependent current and capacitance barriers. We discuss also flat band barrier heights which should be used if one investigates the temperature dependence of fundamental Schottky barrier heights. Their temperature coefficients depend on metallization. For epitaxial NiSi2/Si contacts on (100) oriented Si we find a strong influence of interface crystallography on the temperature coefficients.

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Acknowledgements

We gratefully acknowledge the continuous support of H.J. Queisser. Part of this work is supported by the German Ministry for Research and Technology under contract No. 0328962A.

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Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 7000, Stuttgart 80, Germany

    Jürgen H. Werner, Herbert H. Güttler & Uwe Rau

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  1. Jürgen H. Werner
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  2. Herbert H. Güttler
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  3. Uwe Rau
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Werner, J.H., Güttler, H.H. & Rau, U. Barrier Inhomogeneities at Schottky Contacts: Curved Richardson Plots, Idealities, and Flat Band Barriers. MRS Online Proceedings Library 260, 311–316 (1992). https://doi.org/10.1557/PROC-260-311

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