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Growth and Characterization Of GexSi1-x/Si Multiple Quantum Well Structures

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Abstract

We report on the growth and characterization of multiple quantum well structures by UHV/CVD epitaxy. X-ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

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Acknowledgements

The authors wish to acknowledge support from AFOSR (Grants F49620-92-J-0155 and 89-0144) and NSF (ECS-8814267).

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213

    D.W. Greve, R. Misra & T.E. Schlesinger

  2. Wright- Patterson AFB, Dayton, OH, 45433

    M.A. Capano

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  1. D.W. Greve
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  2. R. Misra
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  3. M.A. Capano
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  4. T.E. Schlesinger
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Greve, D., Misra, R., Capano, M. et al. Growth and Characterization Of GexSi1-x/Si Multiple Quantum Well Structures. MRS Online Proceedings Library 263, 365–370 (1992). https://doi.org/10.1557/PROC-263-365

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  • DOI: https://doi.org/10.1557/PROC-263-365

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