Abstract
Silicon-on-Insulator structures will be an important technological advance used in future VLSI, VHSIC and threedimensional integrated circuits. The most mature SOI technology other than silicon-on-sapphire is SIMOX, or Separation by Implanted Oxygen. High energy oxygen ions are implanted into single crystal silicon until a stoichiometric buried silicon dioxide layer is formed. After implantation, the material is annealed at high temperature to remove implantation induced defects. The structure is completed by the growth of a thin epitaxial silicon layer. Devices and complex circuits have been successfully fabricated by several research groups. This paper reviews the development of this buried oxide SOI technology from 1973 to 1983. The five major sections discuss the advantages of SOI, the basics of buried oxide formation, the literature published between 1973 and 1983, key issues that must be solved before large scale implementation takes place and, finally, predictions of future developments.
Similar content being viewed by others
References
R.J. Dexter, S.B. Watelski and S.T. Picraux, Appl. Phys. Lett., 23, 455 (1973).
S. Nakashima, M. Akiya and K. Kato, Elec. Lett., 19, 568 (1983).
J.F. Gibbons, W.F. Johnson and S.W. Mylroie, Projected Range Statistics, Dowden, Hutchinson and Ross, Stroudsburg, PA, 1975.
M.H. Badawi and K.V. Anand, J. Phys. D, 10, 1931 (1977).
K. Izumi, M. Doken and H. Ariyoshi, Elec. Lett., 14, 593 (1978).
J. Lindhard, M. Scharff and H.E. Schiott, Matt. Fys. Medd. Dan. Vid. Selsk., 33, 1 (1963).
K. Das, J.B. Butcher and K.V. Anand in Chemical Vapor Deposition 1981, edited by J.M. Blocher, Jr., G.E. Vuillard and G. Wahl, The Electrochem. Soc., Pennington, NJ, 81-7, 427 (1981).
H.W. Lam, R.F. Pinizzotto, H.T. Yuan and D.W. Bellavance, Elec. Lett., 17, 356 (1981).
T. Hayashi, H. Okamoto and Y. Homma, Jpn. J. Appl. Phys., 19, 1005 (1980).
T. Hayashi, S. Maeyama and S. Yoshi, Jpn. J. Appl. Phys., 19, 1111 (1980).
R.F. Pinizzotto, B.L. Vaandrager and H.W. Lam, Proc. Mater. Res. Soc, 7, 401 (1982).
K. Ohwada, Y. Omura and E. Sano, 1980 International Electron Devices Meeting Technical Digest, IEEE, New York, 1980, pg.756.
T. Hayashi, H. Okamoto and Y. Homma, Inst. Phys. Conf. Ser., 59, 533 (1981).
J.A. Kilner, S. Littlewood, P.L.F. Hemment, E. Maydell-Ondrusz and K.G. Stephens, presented at the Sixth International Conference on Ion Beam Analysis, Tempe, AZ, May 1983, paper Th 7. To be published in Nucl. Instr. Meth. Phys. Res., (1984).
Y. Irita, Y. Kunii, M. Takahashi and K. Kajiyama, Jpn. J. Appl. Phys., 20, L909 (1981).
K. Das, J.B. Butcher, M.C. Wilson, G.R. Booker, D.W. Wellby, P.L.F. Hemment and K.V. Anand, Inst. Phys. Conf. Ser., 60, 307 (1981).
L.L. Kazmerski, J.R. Dick and R.J. Matson, American Vacuum Society Thirtieth National Symposium, Paper ESThAOl, Boston, MA, November 1983.
S. Maeyama and K. Kajiyama, Jpn. J. Appl. Phys., 21, 744 (1982).
K. Izumi, Y. Omura, M. Ishikawa and E. Sano, in Digest of Technical Papers, 1982 Symposium on VLSI Technology, Kanagawa, Japan. Also see K. Izumi, Y. Omura and T. Sakai, J. Elec. Mat., 12, 845 (1983).
S.D.S. Malhi, H.W. Lam, R.F. Pinizzotto, A.H. Hamdi and F.D. McDaniel, 1982 International Electron Devices Meeting Technical Digest, IEEE, New York, 1982, pg. 107.
A.H. Hamdi, F.D. McDaniel, R.F. Pinizzotto, S. Matteson, H.W. Lam and S.D.S. Malhi, Appl. Phys. Lett., 41, 1143 (1982).
A.H. Hamdi, F.D. McDaniel, R.F. Pinizzotto, S. Matteson, H.W. Lam and S.D.S. Malhi, IEEE Trans. on Nucl. Sci., NS-30, 1722 (1983).
M.J. Kim, D.M. Brown and M. Garfinkel, J. Appl. Phys., 54, 1991 (1983).
M.A. Nicolet, C.D. Lien, R.F. Pinizzotto and S. Matteson, unpublished results.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Pinizzotto, R.F. A Review of Silicon-On-Insulator Formation by Oxygen Ion Implantation. MRS Online Proceedings Library 27, 265–274 (1983). https://doi.org/10.1557/PROC-27-265
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-27-265