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Characterisation of Device Grade Soi Structures formed by Implantation of High Doses of Oxygen

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Abstract

SOI structures have been formed in (100) silicon by implanting 400 keV molecular oxygen to a dose of l.8×l018 O atoms cm−2. These samples were annealed at 1150°C for 2 hours with a SILOX cap. Oxygen depth profiles have been determined by SIMS and wafers implanted at about 500°C have been characterized by studying the regrowth kinetics, As drive in and oxidation rate in the top silicon overlay.

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Author notes

  1. E. A. Maydell-Ondrusz

    Present address: Institute of Nuclear Physics, Krakow, Poland

Authors and Affiliations

  1. Dept. of Electronic & Electrical Engineering, University of Surrey, Guildford, UK

    P. L. F. Hemment, E. A. Maydell-Ondrusz & K. G. Stephens

  2. Martlesham Heath, British Telecom Research Laboratory, Suffolk, UK

    R. P. Arrowsmith & A. C. Glaccum

  3. Imperial College, London, UK

    J. A. Kilner

  4. Middlesex Polytechnic, Bounds Green, London, UK

    J. B. Butcher

Authors
  1. P. L. F. Hemment
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  2. E. A. Maydell-Ondrusz
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  3. K. G. Stephens
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  4. R. P. Arrowsmith
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  5. A. C. Glaccum
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  6. J. A. Kilner
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  7. J. B. Butcher
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Hemment, P.L.F., Maydell-Ondrusz, E.A., Stephens, K.G. et al. Characterisation of Device Grade Soi Structures formed by Implantation of High Doses of Oxygen. MRS Online Proceedings Library 27, 281–286 (1983). https://doi.org/10.1557/PROC-27-281

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  • DOI: https://doi.org/10.1557/PROC-27-281

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