Abstract
The Tc dependence on oxygen content was measured for YBa2Cu3O7-δ films grown with a variety of techniques (solid phase epitaxy, laser ablation, off-axis sputtering, co-evaporation) at oxygen pressures p(O2) ranging from 1.0 atm to 0.1 mTorr. Dissimilar dependences resulted for each film type, with Tc either increasing or decreasing for small increments in δ from maximum oxygen occupancy. Varying systematically with p(O2) during growth, the deviations are attributed to competing effects from hole-doping lattice defects (most likely on the Y-site) on the carrier density of the CuO2 planes and basal plane oxygen capacity, respectively, giving rise to overdoping or underdoping after low temperature oxidation in 1.0 atm of oxygen.
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Acknowledgement
This research was sponsored by the Division of Materials Science, U.S. Department of Energy under contract DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc.
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Feenstra, R., Norton, D.P., Budai, J.D. et al. Tc-δ Relations in YB2Cu3O7-δ Thin Films: st]Effects of Oxygen Pressure During Growth. MRS Online Proceedings Library 275, 101–106 (1992). https://doi.org/10.1557/PROC-275-101
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DOI: https://doi.org/10.1557/PROC-275-101