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Effect of as Overpressure on Mn-Induced Layer Disordering in AlGaAs-GaAs Superlattices: An Investigation of the Mn Diffusion Mechanism

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Abstract

Data are presented showing the effect of As overpressure on the diffusion of Mn into an AlGaAs-GaAs superlattice (SL) using MnAs as the diffusion source. Arsenic overpressure has been shown to play a significant role in both impurity-induced layer disordering (IILD) and the microstructure of the Mn-diffused samples. The degree to which layer disordering occurs decreases as As overpressure increases. Furthermore, dislocation loops are observed for the diffusion of Mn under Ga-rich conditions at prolonged diffusion times. Both results, in addition to the effect of As overpressure on the Mn diffusion profile, indicate that Mn diffusion into GaAs or GaAs-AlGaAs heterostructures takes place by an interstitial-substitutional mechanism involving column III vacancies under As-rich conditions and a "kick-out" mechanism involving column III interstitials under Ga-rich conditions.

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Acknowledgement

The authors would like to acknowledge the Microanalysis Center at the University of Illinois for the use of the facilities. This work has been supported by the National Science Foundation (ECD-89-43166 and DMR-89-20538).

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Authors and Affiliations

  1. Center for Compound Semiconductor Microelectronics, Materials Research Laboratory, and Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA

    C. H. Wu, J. I. Maun & K. C. Hseh

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  1. C. H. Wu
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  2. J. I. Maun
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  3. K. C. Hseh
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Wu, C.H., Maun, J.I. & Hseh, K.C. Effect of as Overpressure on Mn-Induced Layer Disordering in AlGaAs-GaAs Superlattices: An Investigation of the Mn Diffusion Mechanism. MRS Online Proceedings Library 281, 73–78 (1992). https://doi.org/10.1557/PROC-281-73

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  • DOI: https://doi.org/10.1557/PROC-281-73

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