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Photoluminescence from Microcrystalline Silicon and Related Materials

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Abstract

Intense photoluminescence has been obtained from nanocrystalline silicon prepared in completely dry processing by the optimizing the crystallite size and the chemical passivation of the grain boundaries due to a controlled postoxidation of the plasma deposited films.

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Acknowledgment

We should like to thank Dr. V. Petrova-Koch, Prof. Dr. F. Koch and his coworkers for many stimulating discussions. This work has been supported in part by the Deutsche Forschungsgemeinschaft.

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Authors and Affiliations

  1. Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046, Garching/Munich, Germany

    M. Rückschloss, B. Landkammer, O. Ambacher & S. Vepřek

Authors
  1. M. Rückschloss
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  2. B. Landkammer
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  3. O. Ambacher
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  4. S. Vepřek
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Rückschloss, M., Landkammer, B., Ambacher, O. et al. Photoluminescence from Microcrystalline Silicon and Related Materials. MRS Online Proceedings Library 283, 65–70 (1992). https://doi.org/10.1557/PROC-283-65

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  • DOI: https://doi.org/10.1557/PROC-283-65

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