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Optical Activation of Ion Implanted Rare-Earths

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Abstract

A review of the main results concerning the ion implantation of the rare-earth elements is given.

To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and annealing (temperature, duration) conditions. The studied materials are Si, II-VI binaries (ZnTe, CdS), III-V binaries (GaAs, InP), III-V ternaries (GaAlAs, GalnAs) and III-V quaternaries (GaInAsP).

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Authors and Affiliations

  1. CNET, DIR/SAS, France Telecom, B.P. 40, F-22301, Lannion, France

    P. N. Favennec

  2. CNET, LAB/OCM, France Telecom, B.P. 40, F-22301, Lannion, France

    H. L'Haridon, D. Moutonnet, M. Salvi & M. Gauneau

Authors
  1. P. N. Favennec
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  2. H. L'Haridon
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  3. D. Moutonnet
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  4. M. Salvi
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  5. M. Gauneau
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Favennec, P.N., L'Haridon, H., Moutonnet, D. et al. Optical Activation of Ion Implanted Rare-Earths. MRS Online Proceedings Library 301, 181–193 (1993). https://doi.org/10.1557/PROC-301-181

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  • DOI: https://doi.org/10.1557/PROC-301-181

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