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The Influence of Mechanical Stress on Hot-Carrier Degradation in MOSFET’s

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Abstract

Non-uniform hot-carrier degradation in n-channel polycide-gate MOSFET’s with different thicknesses of the poly-Si film, and in p-channel polycide-gate MOSFET’s with TiSi2- or CoSi2-gate-silicide, is studied. The n-MOSFET’s with the thinnest poly-Si film, show an increased interface trap generation, while the influence of the gate-silicide material on the degradation behaviour of the p-MOSFET’s is found to be very small. The results are evaluated in terms of the effect of mechanical stress on the degradation characteristics: favourable for compressive mechanical stress and unfavourable for tensile stress. A correlation with stress measurements by micro-Raman spectroscopy is made.

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Authors and Affiliations

  1. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    Ingrid de Wolf, Rudi Bellens, Guido Groeseneken & Herman E. Maes

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  1. Ingrid de Wolf
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  2. Rudi Bellens
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  3. Guido Groeseneken
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  4. Herman E. Maes
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de Wolf, I., Bellens, R., Groeseneken, G. et al. The Influence of Mechanical Stress on Hot-Carrier Degradation in MOSFET’s. MRS Online Proceedings Library 308, 349–354 (1993). https://doi.org/10.1557/PROC-308-349

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  • DOI: https://doi.org/10.1557/PROC-308-349

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