Skip to main content
SpringerLink
Log in

Characterization of Ti/TiN Films and SiO2/Ti Interfaces by Use of X-Ray Photoelectron Spectroscopy

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

The deposition and processing of thin films, such as barrier metals and anti-reflective coatings, can be enhanced using the information provided by various surface analysis techniques. We will show the application of x-ray photoelectron spectroscopy(XPS) to the production of Ti and TiN films suitable for use in ULSI CMOS integrated circuits. XPS can separate Ti and N photoelectron peaks and detect low (1.0–5.0 atomic%) contamination levels while providing surface and interface chemical state information. In this paper we will show that a) the effect of TiN deposition on subsequent Ti film quality from the same Ti target was determined to be minimal, b) the relation of anneal temperature to the extent of SiO2 reduction by Ti metal was characterized on SiO2/Ti/TiN structures for temperatures from 600°C to 800°C, and c) the absorption of O into TiN films from ambient air was detected and confirmed.References

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Douglas A. Skoog, Principles of Instrumental Analysis, 3rd ed. (CBS College Publishing, New York, 1985), pp. 488–490

    Google Scholar 

  2. A. B. Christie in, Methods of Surface Analysis, edited by J. M. Walls (Cambridge University Press, New York, 1989), pp. 136–137

  3. M. P. Seah in, Practical Surface Analysis Volume 1, 2nd ed. (John Wiley and Sons, New York, 1990), pp. 207–209, equation 5–15

    Google Scholar 

  4. R. Beyers, R. Sinclair, and M. E. Thomas, J. Vac. Sci. Technol. B, Vol. 2, No. 4, Oct–Dec 1984, pp. 782–783

    Article  Google Scholar 

  5. Charles D. Wagner, NIST X-ray Photoelectron Spectroscopy Database, (U.S. Department of Commerce, 1989)

Download references

Author information

Authors and Affiliations

  1. Advanced Micro Devices, P.O. Box 3453, Sunnyvale, CA, 94088-3453, USA

    Joffre Bernard, Ercan Adem & Seshadri Ramaswami

Authors
  1. Joffre Bernard
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Ercan Adem
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Seshadri Ramaswami
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Bernard, J., Adem, E. & Ramaswami, S. Characterization of Ti/TiN Films and SiO2/Ti Interfaces by Use of X-Ray Photoelectron Spectroscopy. MRS Online Proceedings Library 318, 631–636 (1993). https://doi.org/10.1557/PROC-318-631

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-318-631

Search

Navigation