Abstract
An amorphous Si:H linear image sensor operated by a-Si:H TFT array has been proposed. This sensor consists of photodiode array, TFT array, matrix circuit, charge transfer capacitor, and external circuit. Mobility for TFT is 0.6 cm2/V.s and 5 µsec/bit read out time was obtained in the conventional matrix mode scanning. Moreover, a novel driving method is applied in order to improve the effective operation speed and an investigation for TFT noise was performed. Experimental data confirm the validity of the concept.
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Okumura, F., Kaneko, S. Amorphous Si:H Linear Image Sensor Operated by a-Si:H TFT Array. MRS Online Proceedings Library 33, 275–280 (1984). https://doi.org/10.1557/PROC-33-275
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DOI: https://doi.org/10.1557/PROC-33-275