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Rapid Annealing of GaAs and Related Compounds

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Abstract

In recent years, rapid annealing of GaAs has been employed to activate ion implanted dopants and to produce metal-semiconductor contacts. More recently, rapid heating techniques have been used to anneal heterostructures without degrading requisite high mobilities of SDHT devices. This paper reviews the various annealing regimes which are useful for heat treating GaAs and related compounds. Examples are chosen which illustrate unique and potentially useful features of rapid annealing.

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Authors and Affiliations

  1. Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia

    J. S. Williams

  2. A.T. & T. Bell Laboratories, Murray Hill, N.J., 07974, USA

    S. J. Pearton

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  1. J. S. Williams
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  2. S. J. Pearton
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Williams, J.S., Pearton, S.J. Rapid Annealing of GaAs and Related Compounds. MRS Online Proceedings Library 35, 427–438 (1984). https://doi.org/10.1557/PROC-35-427

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