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The Electronic Contribution to The Elastic Constants of Strained III–V Materials Under High Magnetic Fields

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Abstract

In this paper an attempt is made to study the electronic contribution to the elastic constants of strained III-V materials under high magnetic fields on the basis of k.p theory. It is found taking strained Hgi - x CdxTe and Ini - xGaxAsyPi-y lattice matched InP as examples that they increase with increasing doping and oscillate with inverse magnetic field respectively. The strain enhances the numerical values of the elastic constants. The theoretical formulation is in quantitative agreement with the suggested experimental method of determining the above contributions for degenerate materials having arbitrary dispersion laws. In addition, the well-known results for strain free wide gap materials in the absence of magnetic field have been obtained from our generalized analysis under certain limiting conditions.

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Authors and Affiliations

  1. Department of Electronic Science, University of Calcutta, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta, 700009, India

    Kamakhya P Ghatak

  2. Department of Applied Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta, 700009, India

    B. Nag

  3. Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta, 700032, India

    G. Mazumder

Authors
  1. Kamakhya P Ghatak
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  2. B. Nag
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  3. G. Mazumder
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Ghatak, K.P., Nag, B. & Mazumder, G. The Electronic Contribution to The Elastic Constants of Strained III–V Materials Under High Magnetic Fields. MRS Online Proceedings Library 379, 109–114 (1995). https://doi.org/10.1557/PROC-379-109

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  • DOI: https://doi.org/10.1557/PROC-379-109

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