Abstract
Stresses induced at the GaAs-Al2O3 interface by large ΔT excursions have been investigated by finite element simulation and have been correlated with experimental results. The effects of power and temperature cycling on crack propagation at the die attach are investigated. The FEA (finite element analysis) method is used to simulate the effect of die attach voids on the peak surface temperature and on the die stresses. These voids in the die attach are identified to be the major cause of die cracking. It was found that stresses developed on the die because of the environmental temperature changes and their dissipation as part of an effective thermal management is necessary to ensure reliable performance.
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References
J. H. Lau. “Thermal Stress and Strain in Microelectronics Packaging”, Van Nostrand New York, pp. 385–565, 1993.
N. Strifas and Aris Christou, “Die Attach Adhesion and Void Formation at the GaAs Substrate Interface”, MRS, Fall 1994.
N. Strifas and Aris Christou, “Failure Mechanisms, Thermal Analysis and Finite Element Modeling of Medium Band Low Noise Amplifiers”, ASME, Winter Annual Meeting, 1994.
N. Strifas, “Die Attach Voids, Measurements and Simulation”, Master’s Thesis, University of Maryland, 1995.
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Strifas, N., Christou, A. Simulation of Thermal Stresses, Voids and Fracture at the GaAs/Ceramic Interface. MRS Online Proceedings Library 409, 155–161 (1995). https://doi.org/10.1557/PROC-409-155
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DOI: https://doi.org/10.1557/PROC-409-155