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Photoelectric Properties of PbTiO3/Si Heterostructures

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Abstract

Photoelectric properties of PbTiO3/Si heterostructures were investigated over a broad range of wavelengths. The spectral distribution of the a.c. open-circuit voltage was measured for wavelengths ranging from 0.35 μm to 4 μm. Two local peaks are observed at 0.38 μm and 0.9 μm which can be attributed to band-to-band excitations in PbTiO3 and Si respectively. The shape of the a.c. signal depends both on the light intensity and on the wavelength. When the heterojunction is reverse-biased, a d.c. photocurrent was observed which has a similar spectral distribution as the a.c. open-circuit voltage.

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Authors and Affiliations

  1. Institute of Physics and Technology of Materials, P.O. Box MG-7, 76900, Bucharest, Romania

    M. Alexe, L. Pintilie & I. Pintilie

  2. Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120, Halle/Saale, Germany

    A. Pignolet, S. Senz & D. Hesse

Authors
  1. M. Alexe
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  2. L. Pintilie
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  3. I. Pintilie
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  4. A. Pignolet
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  5. S. Senz
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  6. D. Hesse
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Alexe, M., Pintilie, L., Pintilie, I. et al. Photoelectric Properties of PbTiO3/Si Heterostructures. MRS Online Proceedings Library 433, 425–430 (1996). https://doi.org/10.1557/PROC-433-425

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  • DOI: https://doi.org/10.1557/PROC-433-425

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