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Ion Implantation and Annealing Effects in Silicon Carbide

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Abstract

SiC is a promising semiconductor material for high-power/high-frequency and hightemperature electronic applications. For selective doping of SiC ion implantation is the only possible process. However, relatively little is known about ion implantation and annealing effects in SiC. Compared to ion implantation into Si there is a number of specific features which have to be considered for successful ion beam processing of SiC. A brief review is given on some aspects of ion implantation in and annealing of SiC. The ion implantation effects in SiC are discussed in direct comparison to Si. The following issues are addressed: ion ranges, radiation damage, amorphization, high temperature implantation, ion beim induced crystallization and surface erosion.

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  1. Research Center Rossendorf Inc., D-01314, Dresden, POB 510119, Germany

    V. Heera & W. Skorupa

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Heera, V., Skorupa, W. Ion Implantation and Annealing Effects in Silicon Carbide. MRS Online Proceedings Library 438, 241–252 (1996). https://doi.org/10.1557/PROC-438-241

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