Abstract
Electron Spin Resonance (ESR) and related methods have been used to study defects in GaN and in AlxGa1−xN ternary alloys. In particular, Light-induced ESR of a thick MOCVD grown layer of GaN shows that the ESR signature of the deep defect appears for excitation energies > 2.6 eV and saturates above 2.7 eV. This information provides a direct measure of the energetic level position of the diamagnetic to paramagnetic transition of this center. Furthermore, standard ESR investigations of MBE-grown layers of AlxGa1−xN alloys were performed with emphasis on the effective-mass donor resonance. Composition and temperature-dependent measurements of the resonance position are presented.
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Reinacher, N.M., Angerer, H., Ambacher, O. et al. Spin Resonance Investigations of GaN and AlGaN. MRS Online Proceedings Library 449, 579–584 (1996). https://doi.org/10.1557/PROC-449-579
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DOI: https://doi.org/10.1557/PROC-449-579