Abstract
We present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1−xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1−xN high quality films. We report the structural characterization of the AlxGa1−xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm−2 was estimated in AlxGa1−xN / GaN structures. The realization of AlxGa1−xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.
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Kung, P., Saxler, A., Walker, D. et al. AlxGa1−xN-Based Materials and Heterostructures. MRS Online Proceedings Library 449, 79–84 (1996). https://doi.org/10.1557/PROC-449-79
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DOI: https://doi.org/10.1557/PROC-449-79