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Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN

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Abstract

We correlate structure analyzed by transmission electron microscopy with photo- and cathodoluminescence studies of GaN/Al2O3(0001) and GaN/SiC(0001) and show that an additional UV line at 364nm/3.4eV can be connected to the occurrence of stacking faults. We explain the occurrence of this line by a model that is based on the concept of excitons bound to stacking faults that form a quantum well of cubic material in the wurtzite lattice of the layer material. The model is in reasonable agreement with the experimental observations.

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Authors and Affiliations

  1. Institut für Werkstoffwissenschaften, MikroCharakterisierung, Universität Erlangen-Nümberg, Cauerstr.6, 91058, Erlangen, F.R.G, Germany

    M. Albrecht, S. Christiansen & H. P. Strunk

  2. CNR-MASPEC, Via Chiavari 18/A, 43100, Parma, Italy

    G. Salviati & C. Zanotti-Fregonara

  3. A.F. Ioffe Institute, Polytechnicheskaya 26, 194021, St. Petersburg, Russia

    Y. T. Rebane & Y. G. Shreter

  4. Optoelektronik, Universität Ulm, Abt., Albert-Einstein-Allee 45, 89069, Ulm, F.R.G, Germany

    M. Mayer, A. Pelzmann, M. Kamp & K. J. Ebeling

  5. Department of Physics, North Carolina State University, Raleigh, NC, 27695-8202, USA

    M. D. Bremser & R. F. Davis

Authors
  1. M. Albrecht
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  2. S. Christiansen
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  3. G. Salviati
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  4. C. Zanotti-Fregonara
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  5. Y. T. Rebane
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  6. Y. G. Shreter
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  7. M. Mayer
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  8. A. Pelzmann
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  9. M. Kamp
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  10. K. J. Ebeling
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  11. M. D. Bremser
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  12. R. F. Davis
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  13. H. P. Strunk
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Albrecht, M., Christiansen, S., Salviati, G. et al. Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN. MRS Online Proceedings Library 468, 293–298 (1997). https://doi.org/10.1557/PROC-468-293

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  • DOI: https://doi.org/10.1557/PROC-468-293

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