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Theory of Gain in Group-HI Nitride Lasers

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Abstract

A microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.

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Acknowledgement

This work was supported in parts by the U. S. Department of Energy under contract No. DE-AC04-94AL85000, the Deutsche Forschungsgemeinschaft (Germany), and the Leibniz Prize.

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Authors and Affiliations

  1. Sandia National Laboratories, Albuquerque, NM, 85718-0601, USA

    W. W. Chow

  2. Sandia National Laboratories, Albuquerque, NM, 85718-0601, USA

    A. F. Wright

  3. Department of Physics, Philipps University, Renthof 5, 35032, Marburg, Germany

    A. Girndt, F. Jahnke & S. W. Koch

Authors
  1. W. W. Chow
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  2. A. F. Wright
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  3. A. Girndt
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  4. F. Jahnke
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  5. S. W. Koch
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Correspondence to W. W. Chow.

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Chow, W.W., Wright, A.F., Girndt, A. et al. Theory of Gain in Group-HI Nitride Lasers. MRS Online Proceedings Library 468, 487–494 (1997). https://doi.org/10.1557/PROC-468-487

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  • DOI: https://doi.org/10.1557/PROC-468-487

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