Abstract
We adapted a new technique for depositing copper lines, at a maximum process temperature of 200°C. The technique is based on the decomposition of copper hexanoate by UV light, followed by annealing in H2[1]. A copper film resistivity of 8 µΩcm is obtained. We patterned this copper metallization on Corning 7059 glass substrates by three different techniques, including exposure through a shadow mask, lift-off of xerographic toner, and direct writing.
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References
A.A. Avey and R.H. Hill, J. Am. Chem. Soc. 118, 237 (1996).
W.E. Howard, J. SID 3/3, 127 (1995).
M. Dohjo, SID Intl. Symp. Digest Tech. Papers 1988, 330.
P.M. Fryer et al., SID Intl. Symp. Digest Tech. Papers 1996, 333.
H. Sirringhaus, A. Kahn, and S. Wagner, Digest Tech. Papers AM-LCD’96(Kobe) 1996, 391.
R.L. Martin and H. Waterman, J. Chem. Soc. 1957, 2545.
D.P. Graddon, J. Inorg. Nucl. Chem. 3, 222 (1961).
B.J. Palmer, A. Becalska, and R.H. Hill, J. Photochem. Photobiol. A: Chem. 57, 457 (1991).
H. Gleskova, S. Wagner, and D.S. Shen, IEEE Electron Device Lett. 16, 418 (1995).
Acknowledgements
We thank Prof. R.K. Prud’homme for the use of his chemical laboratory and Santipharp Panmai for helping to prepare the precursor material. This work is supported by DARPA under grant no. F 33615-94-1-1464.
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Hong, C.M., Gleskova, H. & Wagner, S. Direct Writing and Lift-Off Patterning of Copper Lines at 200°C Maximum Process Temperature. MRS Online Proceedings Library 471, 35–40 (1997). https://doi.org/10.1557/PROC-471-35
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DOI: https://doi.org/10.1557/PROC-471-35