Abstract
Models that describe hardness of materials do not account for stress-induced phase transformations that occur under sharp indenters. However, experimental work shows that some materials can be transformed under the indenter into new, high-pressure phases with properties that differ significantly from those of the pristine material. In particular, semiconductors (Si, Ge and other) experience Herzfeld-Mott transition (metallization). Significant volume changes can accompany these transformations. In the present paper, Tanaka’s model [1] has been modified to account for reversible phase transformations under contact loading.
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Galanov, B.A., Grigor‘ev, O.N. & Gogotsi, Y.G. Effect of Phase Transformations on Hardness of Semiconductors. MRS Online Proceedings Library 481, 249–254 (1997). https://doi.org/10.1557/PROC-481-249
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DOI: https://doi.org/10.1557/PROC-481-249