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Light-Induced Metastable Defects in a-Si:H: Towards an Understanding

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Abstract

The dependence of the creation and the annealing of metastable dangling bonds in hydrogenated amorphous silicon on various material parameters will be discussed in the context of a recently proposed model. After a brief review of the kinetic behaviour governing defect creation and annealing in undoped a-Si:H, a number of special cases will be analyzed: the influence of alloying with O, N, C, and Ge, changes introduced by doping and compensation, and the role of mechanical stress. Finally, possibilities to increase the stability of a-Si:H based devices will be examined.

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Authors and Affiliations

  1. Xerox Palo Alto Research Center, Palo Alto, CA, 94304, USA

    Martin Stutzmann, Warren B. Jackson & Chuang Chuang Tsai

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  1. Martin Stutzmann
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  2. Warren B. Jackson
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  3. Chuang Chuang Tsai
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Stutzmann, M., Jackson, W.B. & Tsai, C.C. Light-Induced Metastable Defects in a-Si:H: Towards an Understanding. MRS Online Proceedings Library 49, 301–309 (1985). https://doi.org/10.1557/PROC-49-301

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  • DOI: https://doi.org/10.1557/PROC-49-301

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