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Microstructure Investigations and Structure-Property Correlations in Ferroelectric thin film Capacitors

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Abstract

Epitaxial 0%, 3% and 10% La doped PZT capacitors with a LSCO bottom electrode grown by pulsed laser deposition on Si using a Ti(Al)N/Pt conducting barrier layer were systematically studied. Ferroelectric capacitors substituted with 10% La show a significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to the systematic variation of the domain structure of the PLZT film with the increase of La concentration. The in-plane orientation relationship of this heterostructure is: [110]PLZT//[110]LSCO//[110]Pt//[110]Ti(AI)N[110]si. The morphology of the domains as a function of La concentration was studied using high resolution transmission electron microscopy(HREM). The Pt/Ti(Al)N conducting barrier layer stack is intact after the deposition of the LSCO/PLZT/LSCO stack. All Ti(Al)N layers in the samples studied consist of column-like structures with a [110] texture.

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Acknowledgement

This work is supported by NSF- MRSEC grant # DMR 96-32521.

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Authors and Affiliations

  1. Dept. of Materials & Nuclear Eng., Uni. of Maryland, College Park, MD, 20742, USA

    H. Li, B. Yang, A. Dhote, S. Aggarwal, L. Salamanca-Riba & R. Ramesh

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  1. H. Li
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  2. B. Yang
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  3. A. Dhote
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  4. S. Aggarwal
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  5. L. Salamanca-Riba
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  6. R. Ramesh
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Correspondence to H. Li.

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Li, H., Yang, B., Dhote, A. et al. Microstructure Investigations and Structure-Property Correlations in Ferroelectric thin film Capacitors. MRS Online Proceedings Library 493, 171–176 (1997). https://doi.org/10.1557/PROC-493-171

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  • DOI: https://doi.org/10.1557/PROC-493-171

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