Abstract
Dislocation structures in Al-Cu thin films have been studied by transmission electron microscopy (TEM). We have observed that the contrast of interface dislocations disappears in the electron beam. We assume that the contrast dissolution is due to the spreading of the dislocation core at the crystalline/amorphous interface or due to a diffusive movement of the dislocation through the oxide. In any case, the relaxation is assumed to be controled by irradiation induced diffusion. As a consequence, the short range stresses and at least partly also the long range stresses of the dislocations relax. This relaxation changes the interaction force between dislocations and may thus significantly affect the mechanical properties of thin films. It is concluded that interaction between interface dislocations may not be responsible for the high temperature strength of aluminum films.
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Müllner, P., Arzt, E. Observation of Dislocation DisAppearance in Aluminum Thin Films and Consequences for Thin Film Properties. MRS Online Proceedings Library 505, 149–154 (1997). https://doi.org/10.1557/PROC-505-149
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DOI: https://doi.org/10.1557/PROC-505-149