Abstract
Silicon nanowires have been synthesized by using a high-temperature laser ablation method. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and lengths up to a few hundreds μm. Raman scattering spectrum shows an asymmetric peak at the same position as that of bulk crystalline silicon. The x-ray diffraction revealed an important contribution from surface oxide. This is due to the high surface-to-volume ratio. Visible photoluminescence (PL) was observed in nanowires with sub-5 nm diameter.
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Acknowledgement
The financial support from the Strategic Research Grants of the City University of Hong Kong and the Research Grant Council of Hong Kong are gratefully acknowledged. Y.F. Zhang sincerely thanks the Croucher Foundation for a Visitor Fellowship.
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Zhang, Y., Tang, Y., Wang, N. et al. Silicon Nanowire: a New Shape of Crystalline Silicon. MRS Online Proceedings Library 507, 993–998 (1998). https://doi.org/10.1557/PROC-507-993
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DOI: https://doi.org/10.1557/PROC-507-993