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A Two-Step Low-Temperature Process for a P−N Junction Formation Due to Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon

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Abstract

The incorporation of hydrogen into standard p-type Czochralski (Cz) silicon (≥1 Ωcm) by a 110 MHz plasma treatment at 260°C leads to the formation of an n-type region due to hydrogen enhanced thermal donor (TD) formation in hydrogenated regions of the wafer, if a subsequent annealing in air is applied at 450°C. Spreading resistance probe (SRP) and light beam induced current (LBIC) measurements were used for the experimental analysis. The p-n junction depth, i. e. the counter doping by TDs, depends on the initial doping level of the p-type substrate, and therefore on the post-hydrogenation annealing time. The penetration of the n-type region into the wafer bulk is driven by a rapid hydrogen diffusion. The essential process for a TD generation is the creation of metastable hydrogen molecular species around 260°C and their decay at 450°C.

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Authors and Affiliations

  1. University of Hagen, P.O. Box 940, D-58084, Hagen, Germany

    R. Job & W. R. Fahrner

  2. Belarussian State University, Minsk, 220050, Belarus

    N. M. Kazuchits

  3. Belarussian State Polytechnical Academy, Minsk, 220027, Belarus

    A. G. Ulyashin

Authors
  1. R. Job
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  2. W. R. Fahrner
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  3. N. M. Kazuchits
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  4. A. G. Ulyashin
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Job, R., Fahrner, W.R., Kazuchits, N.M. et al. A Two-Step Low-Temperature Process for a P−N Junction Formation Due to Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon. MRS Online Proceedings Library 513, 337–342 (1998). https://doi.org/10.1557/PROC-513-337

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  • DOI: https://doi.org/10.1557/PROC-513-337

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