Abstract
The grain coalescence phenomenon in the growth of heteroepitaxial diamond film on (001) silicon substrate by microwave plasma chemical vapor deposition was examined by using high-resolution electron microscopy. It was shown that this phenomenon evidently occurs between two diamond grains with a small-angle tilt. The coalescence was completed after some more growth steps following the meeting of such two grains, indicating the difficulty for the lattice matching in grain boundary. By performing simulation of a step-by-step growth of two diamond grains on a (001) silicon substrate with molecular orbital PM3 method, it was shown that the bonding regeneration between the two grains is essential for the coalescence and the coalescence is only possible when the orientation difference between the grains is sufficiently small so as to allow efficient overlap of electron cloud in the grain boundary. This study indicates that single crystal diamond growth may be possible by the current CVD growth techniques via further reduction of the surface roughness to gain a heteroepitaxy with very small grain tilting.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
B.V. Spitsyn, L.L. Bouilov and B.V. Derjaguin, J. Cryst. Growth 52, 219 (1981).
M. Yoshikawa, H. Ishida, A. Ishitani, T. Murakami, S. Koizumi and T. Inuzuka, Appl. Phys. Lett. 57, 428 (1990).
B.R. Stoner, and J.T. Glass, Appl. Phys. Lett. 60, 698(1992)
B.R. Stoner, G.H.M. Ma, S.D. Wolter and J.T. Glass, Phys. Rev. B45, 11067 (1992).
X. Jiang and C.-P. Klages, Diamond Relat. Mater. 2, 1112 (1993).
X. Jiang, C.-P. Klages, R. Zachai, M. Hartweg and H.-J. Fiisser, Appl. Phys. Lett. 62, 3438 (1993).
X. Jiang, C.-P. Klages, M. Rösler, R. Zachai, M. Hartweg and H.-J. Fisser, Appl. Phys. A 57, 483 (1993).
S.D. Wolter, B.R. Stoner and J.T. Glass, P.J. Ellis, D.S. Buhaenko, C.E. Jenkins and P. Southworth, Appl. Phys. Lett. 62, 1215 (1993).
Q.J. Chen, J. Yang and Z.D. Lin, Appl. Phys. Lett. 67, 1853(1995)
Q.J. Chen, Y. Chen, J. Yang and Z.D. Lin, Thin Solid Films 274, 160 (1996).
S.G. Song, C.L. Chen, T.E. Mitchell, L.B. Hackenberger and R. Messier, J. Appl. Phys. 79, 1813 (1996).
M.G. Jubber and D.K. Milne, Phys. Stat. Sol. (a) 154, 185 (1996).
M. Schreck and B. Stritzker, Phys. Stat. Sol. (a) 154, 197 (1996).
Y. Von Kaenel, J. Stiegler, E. Blank, O. Chauvet, Ch. Hellwig and K. Plamann, Phys. Stat. Sol. (a) 154, 219 (1996).
C.J. Chen, L. Chang, T.S. Lin and F.R. Chen, J. Mater. Res. 11, 1002 (1996).
J.C. Angus and C.C. Hayman, Science 241, 913 (1988).
A.T. Collins, Semicond. Sci. Technol. 4, 605 (1989).
W.A. Yarbrough and R. Messier, Science 247, 688 (1990).
X. Jiang and C.L. Jia, Appl. Phys. Letters 69, 3902 (1996).
X. Jiang and C.L. Jia, J. Appl. Phys. 83 (5), 2511 (1998).
X. Jiang and C.L. Jia, Appl. Phys. Lett. 67, 1197 (1995).
C.L. Jia, K. Urban and X. Jiang, Phys. Rev. B52, 5164 (1995).
Q.J. Chen, L.X. Wang, Z. Zhang, J. Yang, Z.D. Lin, Appl. Phys. Lett. 68, 176 (1996).
D.A. Tucker, D.-K. Seo, M.-H. Whangbo, F.R. Sivazlian, B.R. Stoner, S.P. Bozeman, A.T. Sowers, R.J. Nemanich and J.T. Glass, Surf. Sci. 334, 179 (1995).
X. Jiang and C.-P. Klages, Phys. Status Solidi A 154, 175 (1996).
J.J.P. Stewart, J. Comput. Chem. 2, 209 (1989).
M.J.S. Dewar and W.J. Thiel, J. Am. Chem. Soc. 99, 4899 (1977).
R.Q. Zhang, W.L. Wang, J. Esteve and E. Bertran, Appl. Phys. Lett 69, 1086 (1996).
R.Q. Zhang, W.L. Wang, J. Esteve and E. Bertran, Thin Solid Film, in press; and their following work.
X. Jiang, R.Q. Zhang, G. Yu and S.T. Lee, unpubmitted.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Zhang, R.Q., Jiang, X., Jia, C.L. et al. Bonding Regeneration: The Driving Force of Hetero-Epitaxial Diamond Grain Coalescence on (001) Silicon. MRS Online Proceedings Library 529, 133–138 (1998). https://doi.org/10.1557/PROC-529-133
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-529-133